150mm Polished Silicon Wafer
Growth Method
CZ(cz)
Diameter And Tolerance
150.0 ± 0.2(mm)
Type /Dopant
P type/bN type /p/As/Sb
Orientation
<100> / <111>
Resistivity
0.003-50Ω·cm
Radial Specific Resistance Change
p type < 6%n type < 25%
Oxygen Content And Tolerance
5.0～7.8×1017± 0.5×1016 at/cm3
Radial Oxygen Content change
< 5%
Carbon Content
≤ 2.0×1016...
200mm Polished Silicon Wafer
Growth Method
CZ(cz)
Diameter And Tolerance
200.0 ± 0.2(mm)
Type /Dopant
P type/bN type/p
Orientation
<100> / <111>
Resistivity
0.1-50Ω·cm
Radial Specific Resistance Change
P Type < 5%N Type < 15%
Oxygen Content And Tolerance
5.0～7.8 ×1017± 0.5×1016at/cm3
Radial Oxygen Content Change
< 5%
Carbon Content
≤ 2.0×1016 at/cm3
Metal...
Multi-crystalline silicon wafer
Type
Multi-crystalline Silicon Wafer
SIZE
125*125±0.5mm or 156*156±0.5mm
Resistivity
0.5Ω/cm-3Ω/cm(3.0-6.0)
Life Time
>2μs
OXYGEN cONTENT
<1.0*1018
CARBON CONTENT
<5*1016
Thickness
220μm+/-20μm/270μm+/-20μm
TTV
<30μm
bow
≤40μm
Crack and pinhole: no cracks and pin holes visible with the naked eye...
Mono-crystalline silicon wafer
Solar Grade mono-crystalline silicon wafer
SOLAR WAFER
Type
P
N
Dopant
BORON
Ph
Size
125*125±0.5mm
156*156±0.5mm
Thickness
220±20 or 270±25μm
Resistivity
0.5~3Ω.cm 3~6Ω.cm
Life Time
>10μs(20)
Orientation
<100>±3°
Cutting
Multiple Wire Cut
TTV
<30μm
Perpendicularity
90°±0.5°
Dislocation Density
≤3000 at/ cm2
Oxygen Content
≤1.0...
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